unisonic technologies co., ltd UFZ34 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-900.a 28 a , 60v n-channel power mosfet ? description the utc UFZ34 is an n-channel power mosfet, it uses utc?s advanced technology to provide the customers with a minimum on state resistance, high switchi ng speed and low gate charge. the utc UFZ34 is suitable for all commercial-industrial applications, etc. ? features * r ds(on) <0.042 ? @v gs =10v, i d =17a * high switching speed * low gate charge ? symbol g (1) d (2) s (3) ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UFZ34l-ta3-t UFZ34g-ta3-t to-220 g d s tube UFZ34l-tm3-t UFZ34g-tm3-t to-251 g d s tube UFZ34l-tn3-r UFZ34g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
UFZ34 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw ver.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current continuous t c =25c i d 28 a t c =100c 20 a pulsed (note 1) i dm 112 a avalanche current (note 1) i ar 17 a avalanche energy single pulsed (note 2) e as 97 mj repetitive (note 1) e ar 6.8 mj peak diode recovery dv/dt (note 3) dv/dt 5.0 v/ns power dissipation t c =25c p d 68 w linear derating factor 0.46 w/c junction temperature t j -55~+175 c storage temperature range t stg -55~+175 c note: absolute maximum ratings are those values be yond which the device coul d be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol rating unit junction to ambient ja 62 c/w junction to case jc 3.3 c/w notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. l=670h, i as =17a, r g =25 ? , starting t j =25c. 3. i sd 17a, di/dt 200a/s, v dd bv dss , starting t j 175c.
UFZ34 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-900-.a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 60 v drain-source leakage current i dss v ds =60v, v gs =0v 25 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance (note 2) r ds(on) v gs =10v, i d =17a 0.042 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 680 pf output capacitance c oss 220 pf reverse transfer capacitance c rss 80 pf switching parameters total gate charge q g v gs =10v, v ds =48v, i d =17a (note 4) 30 nc gate to source charge q gs 6.7 nc gate to drain charge q gd 12 nc turn-on delay time t d ( on ) v dd =30v, i d =17a, r g =13 ? , r d =1.8 ? (note 2) 5.1 ns rise time t r 30 ns turn-off delay time t d ( off ) 22 ns fall-time t f 30 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 28 a maximum body-diode pulsed current (note 1) i sm 100 a drain-source diode forward voltage (note 2) v sd t j =25c, i s =17a, v gs =0v 1.3 v body diode reverse recovery time t rr t j =25c, i f =17a, di/dt=100a/s 63 95 ns body diode reverse recovery charge (note 2) q rr 130 200 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. pulse width 300s, duty cycle 2%.
UFZ34 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-900-.a ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off
UFZ34 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-900-.a ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
UFZ34 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-900-.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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